19 November 1993 Investigation of strain relaxation in short-period SimGen superlattices using reciprocal space mapping
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162744
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The optoelectronic properties of ultrathin SimGen strained layer superlattices (SLSs) depend strongly on their structural perfection and the strain adjustment of the SLS by a Si1-xGex alloy buffer. We used double crystal and triple axis x-ray diffractometry to characterize the structural properties of short period Si6Ge4 and Si9Ge6 SLSs grown on about 1 micrometers thick step-graded SiGe alloy buffers. As grown SLSs and samples annealed subsequently at 550 degree(s)C, 650 degree(s)C, and 780 degree(s)C for 60 min were investigated, the latter to study effects of post-growth thermal treatments typical for conventional Si device fabrication. Precise strain data were extracted from two-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points. These data were used as refined input parameters for the dynamical simulation of the integrated intensity along the q[004] direction.
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E. Koppensteiner, P. Hamberger, Guenther E. Bauer, Horst Kibbel, Hartmut Presting, Erich Kasper, Andreas Pesek, "Investigation of strain relaxation in short-period SimGen superlattices using reciprocal space mapping", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162744; https://doi.org/10.1117/12.162744
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