19 November 1993 Lifetime of excitons in GaAs quantum wells
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162797
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free exciton in very high quality GaAs-AlAs quantum wells. At resonance, the luminescence intensity is increased by two orders of magnitude, and the decay is short. The radiative lifetime of the excitons in the radiant states is about 18 ps in agreement with the theory of Hanamura and Andreani. The lifetime of the thermalized excitons is about 80 ps at low excitation and it increases with the excitation density.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard Sermage, Benoit Deveaud, Martin Berz, F. Clerot, S. Long, D. Scott Katzer, Francis Mollot, "Lifetime of excitons in GaAs quantum wells", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162797; https://doi.org/10.1117/12.162797
PROCEEDINGS
8 PAGES


SHARE
Back to Top