19 November 1993 Line-narrowing and fast modulation of AlGaAs and InGaAlP semiconductor diode lasers
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162814
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Semiconductor diode lasers emitting in the visible and near-infrared region of the spectrum are valuable sources of coherent radiation in several fields of fundamental and applied research. In particular, the properties of spectral purity and frequency tunability are major issues for their use in spectroscopy or in coherent communication systems. The emission characteristics can be improved using optical feedback from external cavities. A reduction of the emission linewidth by several orders of magnitude was achieved for visible and near-infrared lasers. Although the frequency modulation capabilities are usually affected by the presence of the optical feedback, we found that under special resonant conditions it is possible to have simultaneously a narrow-linewidth laser with a high-frequency modulation capability. Modulation frequencies up to several GHz were achieved. Applications of these devices to spectroscopy are described.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guglielmo M. Tino, Guglielmo M. Tino, Massimo Inguscio, Massimo Inguscio, Francesco S. Pavone, Francesco S. Pavone, Francesco Marin, Francesco Marin, } "Line-narrowing and fast modulation of AlGaAs and InGaAlP semiconductor diode lasers", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162814; https://doi.org/10.1117/12.162814
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