19 November 1993 Linear and nonlinear optics of asymmetric quantum wells
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162772
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
An improved two-band model is proposed for excitons in GaAs-Ga1-xAlxAs quantum wells, where the x dependence of the anisotropic effective masses and the dielectric mismatch are both included. Exciton energies and oscillator strengths are obtained for typical asymmetric quantum wells. The mean field model of Agranovich is then used to derive the dispersion laws of the exciton polariton modes. The splitting of the mode polarized in the growth direction from the in-plane modes is in agreement with available experiments. We also compute the optical properties (transmission, reflection, absorption) of multiple quantum wells, and find new effects in the asymmetric case. Nonlinear optical properties of multiple asymmetric quantum wells are also considered, and it is shown that harmonic generation near the exciton resonance frequency is orders of magnitude higher than in bulk material for special geometries of the microstructures. This is in agreement with anomalously large values of (Chi) (2) measured in double asymmetric wells.
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R. Atanasov, G. F. Bassani, "Linear and nonlinear optics of asymmetric quantum wells", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162772; https://doi.org/10.1117/12.162772
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