19 November 1993 Magneto-optical study of band parameters in the GaAs/(Al,Ga)As MQW heterosystem
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162812
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The exciton binding energy have been calculated as function of the magnetic field and the quantum well width for the various exciton and magnetic states. The variational calculation carried out in the adiabatic approach has shown the sizeable enhancement of the exciton binding energy with the increase of the external field. For rather strong magnetic fields the exciton binding energy has been found in the framework of the perturbation theory. The results were used for the analysis of the spectra of light transmission through the thin semiconductor film containing GaAs/Alo,3Gll(),7As multiple quantum well structure in the external magnetic field tuning from 0 to 7 .S T at T = 2 K.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ruben P. Seisyan, Ruben P. Seisyan, S. I. Kokhanovskii, S. I. Kokhanovskii, Alexey V. Kavokin, Alexey V. Kavokin, A. I. Nesvizhskii, A. I. Nesvizhskii, } "Magneto-optical study of band parameters in the GaAs/(Al,Ga)As MQW heterosystem", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162812; https://doi.org/10.1117/12.162812
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