19 November 1993 Modification of heterojunction band offsets at III-V/IV/III-V interfaces
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162747
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
We summarize here a systematic investigation of the structural and electronic properties of III- V/IV semiconductor heterojunctions (with IV equals Si, Ge, and III-V equals GaAs, AlAs) as well as III-V/IV/III-V single and multiple quantum well structures. All structures were fabricated by molecular beam epitaxy and characterized in-situ by reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by x-ray diffraction and transmission electron microscopy. We found that relatively abrupt composition profiles and ideal pseudomorphic growth could be achieved through appropriate deposition conditions. Measurements of the band discontinuities indicated that large deviations from the commutativity and transitivity rules of heterojunction band offsets are observed in most of these interfaces. Such deviations demonstrate the dependence of the band discontinuities on the local interface environment and are related, in general, to the establishment of inequivalent local interface environments.
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G. Biasiol, G. Biasiol, L. Sorba, L. Sorba, Gvido Bratina, Gvido Bratina, R. Nicolini, R. Nicolini, Alfonso Franciosi, Alfonso Franciosi, } "Modification of heterojunction band offsets at III-V/IV/III-V interfaces", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162747; https://doi.org/10.1117/12.162747
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