19 November 1993 Near-surface quantum wells in GaAs: recovery of emission efficiency via surface passivation by hydrogen and stability effects
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162809
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The role of surface states in reducing the radiative efficiency of a GaAs/AlGaAs quantum well (QW), situated in proximity of the surface, has been investigated. The near-surface QW photoluminescence (PL) was utilized as a probe of the effects of room-temperature hydrogen irradiation and of the subsequent evolution of the system in time. The e1 - hh1 PL at 1.4 K of various near-surface wells, differing in distance from the surface, was found to drop when the AlGaAs barrier was made thinner than 150 angstroms, due to short-circuiting recombination processes at the surface. The data were interpreted in terms of electron and hole tunneling to surface states. A study of the stability of the passivation effect -- samples being investigated again after an eight-month-long exposure to air, or after annealing in vacuum -- is indicative of important changes in the lifetimes of the different radiative and non-radiative processes associated with the well.
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Andrea Frova, V. Emiliani, Mario Capizzi, B. Bonanni, Ying-Lan Chang, YongHang Zhang, James L. Merz, "Near-surface quantum wells in GaAs: recovery of emission efficiency via surface passivation by hydrogen and stability effects", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162809; https://doi.org/10.1117/12.162809
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