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19 November 1993 New class of coupled-quantum-well semiconductors with large electric field-tunable nonlinear susceptibilities in the infrared
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162749
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
In this paper we report an in-depth study of the nonlinear optical properties associated with intersubband transitions in AlInAs/GaInAs coupled quantum wells grown by MBE. Structures with giant nonlinear susceptibilities (Chi) (2)(2 (omega) ) and (Chi) (3)(3 (omega) ) (compared to the bulk constituents of the quantum wells) have been designed and demonstrated. They exhibit large linear Stark shifts of the intersubband transitions which have been used to efficiently tune the nonlinear susceptibilities. The second order nonlinear susceptibility (Chi) (2)(2 (omega) ) exhibits a peak as a function of the electric field corresponding to the energy levels being made equally spaced via the Stark effect. In a three-coupled-well structure triply resonant third harmonic generation has been observed. The corresponding (Chi) (3 (omega ))(3) (10-14(m/V)2 at 300 K and 4 X 10-14 (m/V)2 at 30 K) is the highest measured in any material. The equivalent of multiphoton ionization of a molecule has also been investigated in this structure.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carlo Sirtori, Federico Capasso, and Alfred Y. Cho "New class of coupled-quantum-well semiconductors with large electric field-tunable nonlinear susceptibilities in the infrared", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162749
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