19 November 1993 Nonequilibrium charge carriers recombination, diffusion peculiarities, and bleaching in InGaAs(P) epitaxial layers
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162765
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The method of picosecond laser induced grating (LIG) was used for investigation of non- equilibrium charge carriers (NCC) dynamics in the epitaxial layers of InGaAsP and InGaAs. The carriers recombination time (tau) R and diffusion coefficient Da have been determined. The influence of bleaching on the revealed values is discussed.
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Mindaugas Petrauskas, Saulius Juodkazis, Magnus Willander, Aziz Quacha, "Nonequilibrium charge carriers recombination, diffusion peculiarities, and bleaching in InGaAs(P) epitaxial layers", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162765; https://doi.org/10.1117/12.162765
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