19 November 1993 Nonequilibrium charge carriers recombination, diffusion peculiarities, and bleaching in InGaAs(P) epitaxial layers
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162765
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The method of picosecond laser induced grating (LIG) was used for investigation of non- equilibrium charge carriers (NCC) dynamics in the epitaxial layers of InGaAsP and InGaAs. The carriers recombination time (tau) R and diffusion coefficient Da have been determined. The influence of bleaching on the revealed values is discussed.
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Mindaugas Petrauskas, Mindaugas Petrauskas, Saulius Juodkazis, Saulius Juodkazis, Magnus Willander, Magnus Willander, Aziz Quacha, Aziz Quacha, } "Nonequilibrium charge carriers recombination, diffusion peculiarities, and bleaching in InGaAs(P) epitaxial layers", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162765; https://doi.org/10.1117/12.162765
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