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19 November 1993 Nonlinear optical phenomena and lasing in semiconductor quantum dots and wires
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162756
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Transmission spectra recovery of CdSe, CdSxSe1-x nanocrystals and porous silicon wires optically excited by ultrashort laser pulses have been studied with picosecond time resolution using pump and probe technique. The transitions between levels of electrons and holes spatially confined within nanocrystals and thin wires were observed as bleaching bands in nonlinear transmission spectra (saturation effect). Spectra and values of third order resonant susceptibility were determined for nanocrystals of different size and porous silicon using the experimentally measured differential transmission spectra.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. S. Dneprovskii, V. A. Karavanskii, Victor I. Klimov, D. K. Okorokov, and Yu. V. Vandyshev "Nonlinear optical phenomena and lasing in semiconductor quantum dots and wires", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162756
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