19 November 1993 Photoluminescence of porous silicon by pulse exitation
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162796
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Strong time evolution of the porous silicon photoluminescence (PL) spectrum was first found and investigated. Two radiation bands were demonstrated under pulse optical excitation.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Andrianov, A. V. Andrianov, Dmitri I. Kovalev, Dmitri I. Kovalev, V. B. Shuman, V. B. Shuman, Ilya D. Yaroshetskii, Ilya D. Yaroshetskii, } "Photoluminescence of porous silicon by pulse exitation", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162796; https://doi.org/10.1117/12.162796
PROCEEDINGS
5 PAGES


SHARE
Back to Top