19 November 1993 Scaling-law anomaly and band-structure-enhanced optical nonlinearities in semiconductor superlattices
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162770
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
We show that there is a well defined class of semiconductor heterostructures (e.g., GaSb- InAs-AlSb, CdHgTe-CdTe) which do not obey the universal scaling law valid for below band gap excitations in bulk insulators and semiconductors. The magnitude, and the frequency at which the third order susceptibility changes its sign, are tunable over a range of energies spanning a significant fraction of the band gap, and reflect the separation in energy and the character of the dispersion in momentum space of higher lying minibands. The role of the microscopic (e.g., band structure) effects is also demonstrated in the range of photon energies capable of generating optical nonlinearities in the mid and far infrared, e.g., via excitations between valence minibands in p-type GaAs-AlAs quantum well structures.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Milan Jaros, Milan Jaros, Mike J. Shaw, Mike J. Shaw, } "Scaling-law anomaly and band-structure-enhanced optical nonlinearities in semiconductor superlattices", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162770; https://doi.org/10.1117/12.162770
PROCEEDINGS
8 PAGES


SHARE
Back to Top