19 November 1993 Si-SiGe and GaAl-AlAs quantum-well structures for second-harmonic generation
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993); doi: 10.1117/12.162750
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
We report full scale calculations with relativistic pseudopotentials of first and second order optical susceptibilities in p-type GaAs-AlAs and Si-SiGe quantum well structures in which the response arises due to excitations between valence minibands. Our results contain several novel features. In particular, the peak value of the frequency dependent susceptibility is controlled by optical transitions originating from regions of the momentum space lying further from the center of the Brillouin zone. The excitation steps that give a quantitative meaning to the optical nonlinearity involve quantum states lying above the semiclassical barrier.
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K. B. Wong, Mike J. Shaw, B. M. Adderley, Elizabeth A. Corbin, Milan Jaros, "Si-SiGe and GaAl-AlAs quantum-well structures for second-harmonic generation", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162750; https://doi.org/10.1117/12.162750
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KEYWORDS
Harmonic generation

Nonlinear optics

Quantum wells

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