19 November 1993 Stark ladder transition of GaAs/AlGaAs superlattices in high-energy region
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162810
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Electroreflectance and photocurrent measurements at low temperatures have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 angstrom)/AlGaAs(20 angstrom) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5 eV - 2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9 eV- 2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahito Yamaguchi, Masahito Yamaguchi, Masato Morifuji, Masato Morifuji, Hitoshi Kubo, Hitoshi Kubo, Kenji Taniguchi, Kenji Taniguchi, Chihiro Hamaguchi, Chihiro Hamaguchi, Claire F. Gmachl, Claire F. Gmachl, Erich Gornik, Erich Gornik, "Stark ladder transition of GaAs/AlGaAs superlattices in high-energy region", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162810; https://doi.org/10.1117/12.162810
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