19 November 1993 Strained AlGaInP visible-emitting quantum-well lasers
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162800
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
A series of strained AlGaInP quantum well lasers has been fabricated with GaxIn1-xP wells of a fixed width, Lz equals 65 angstrom, in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures approximately 130 K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.
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Huw D. Summers, Huw D. Summers, Peter Blood, Peter Blood, } "Strained AlGaInP visible-emitting quantum-well lasers", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162800; https://doi.org/10.1117/12.162800
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