Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties

Manuela Vieira; Elvira Fortunato; Carlos N. Carvalho; Guilherme Lavareda; Fernando Soares; Rodrigo Martins

doi:10.1117/12.162792

19 November 1993 Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties

Manuela Vieira, Elvira Fortunato, Carlos N. Carvalho, Guilherme Lavareda, Fernando Soares, Rodrigo Martins

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162792
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

The purpose of this work is to understand how the recombination of carriers generated by light (at several temperatures) can influence the a-Si:H devices quality. Here we report a comparative analysis between the photovoltaic performances of the PIN diodes and the transport properties of their active i-layers under the same degradation conditions.

Citation Download Citation

Manuela Vieira, Elvira Fortunato, Carlos N. Carvalho, Guilherme Lavareda, Fernando Soares, and Rodrigo Martins "Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162792

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