19 November 1993 Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993); doi: 10.1117/12.162792
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The purpose of this work is to understand how the recombination of carriers generated by light (at several temperatures) can influence the a-Si:H devices quality. Here we report a comparative analysis between the photovoltaic performances of the PIN diodes and the transport properties of their active i-layers under the same degradation conditions.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manuela Vieira, Elvira Fortunato, Carlos N. Carvalho, Guilherme Lavareda, Fernando Soares, Rodrigo Martins, "Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162792; https://doi.org/10.1117/12.162792
PROCEEDINGS
12 PAGES


SHARE
KEYWORDS
Photovoltaics

PIN photodiodes

Temperature metrology

Back to Top