19 November 1993 Tuning heterojunction band offsets by interface δ-doping
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162760
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The band offset at semiconductor heterojunctions is shown to be extremely sensitive to the presence at the interface of a delta-doping layer with sheet density much smaller than that of a full monolayer. Different models are analyzed in the effective-mass approximation in order to cover the full range of densities, from the low-density isolated-impurity picture to the high- density Thomas-Fermi description. Predictions for realistic Al0.3Ga0.7As/GaAs structures are given.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sandro Scandolo, Sandro Scandolo, Alfonso Baldereschi, Alfonso Baldereschi, } "Tuning heterojunction band offsets by interface δ-doping", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162760; https://doi.org/10.1117/12.162760
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