19 November 1993 Very large |x(2)(2w)| in the near infrared in AlSb/GaSb-InAsSb/AlSb asymmetric quantum wells
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162752
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
A very large second-order susceptibility (Chi) (2)(2(omega) ), responsible for frequency doubling, is obtained for interband transitions at near-infrared wavelengths in a step-like asymmetric quantum well based on GaSb-InAsSb compounds. The structure is engineered so as to achieve a double energy resonance between the electron and hole states and to maximize all relevant dipole matrix elements. The optimized structure has (Chi) (2)(2(omega) ) approximately equals 9 X 10-9 m/V at a pump wavelength of 1.5 micrometers , with an enhancement of about 30 times with respect to the second-order susceptibility of bulk GaAs.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sandro Scandolo, Sandro Scandolo, Alfonso Baldereschi, Alfonso Baldereschi, Federico Capasso, Federico Capasso, } "Very large |x(2)(2w)| in the near infrared in AlSb/GaSb-InAsSb/AlSb asymmetric quantum wells", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162752; https://doi.org/10.1117/12.162752
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