29 December 1993 High-resolution image device on the base of Me-ChDS structure
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Abstract
The Me-Chalcogenide glassy semiconductor-dielectric-semiconductor (Me-As2S3- SiO2-Si) structure was formed and the writing and readout processes of the optical image with high resolution were studied. The structures make the positive and negative images possible. The device works in both accumulation of the small signals and real time. The space functional separation of the recording and readout allows us to carry out repetition readout of the image and other operations.
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Andrei M. Andriesh, Sergei A. Malkov, Victor I. Verlan, "High-resolution image device on the base of Me-ChDS structure", Proc. SPIE 1987, Recording Systems: High-Resolution Cameras and Recording Devices and Laser Scanning and Recording Systems, (29 December 1993); doi: 10.1117/12.165190; https://doi.org/10.1117/12.165190
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