19 November 1993 Implications of carrier mobility limitations for GaAs as an x-ray detector
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Abstract
Theoretically, gallium arsenide detectors offer an attractive alternative to silicon for the high energy x-ray astronomer, due to the greater absorption power of the material. However, in practice, GaAs detectors made from bulk-grown crystals have a spectral resolution which falls well short of both expectation and that achieved by silicon detectors of comparable thickness. In contrast, a detector fabricated from GaAs grown by the liquid phase epitaxial (LPE) process displays full charge collection with a resolution in agreement with that expected from measurements of leakage current and device capacitance. Experimental results are presented showing the level of spectral resolution possible in a variety of GaAs detectors, including Liquid Enhancement Czochralski material from various manufacturers, Vertical Bridgeman and LPE material. Both the detector performance and the electrical characteristics (voltage- current, noise, etc) have been explored for each device.
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S. M. Grant, S. M. Grant, Timothy J. Sumner, Timothy J. Sumner, J. P. Warren, J. P. Warren, D. Alexiev, D. Alexiev, K. S. A. Butcher, K. S. A. Butcher, } "Implications of carrier mobility limitations for GaAs as an x-ray detector", Proc. SPIE 2006, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV, (19 November 1993); doi: 10.1117/12.162849; https://doi.org/10.1117/12.162849
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