19 November 1993 X-ray, EUV, UV, and optical quantum efficiency measurements of laser-annealed ion-implanted CCDs
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Abstract
We report quantum efficiency measurements of back-illuminated, ion-implanted, laser- annealed charge coupled devices (CCDs) in the wavelength range 13 - 10,000 angstroms. The equivalent quantum efficiency (EQE equals equivalent photons detected per incident photon) range from a minimum of 5% at 1216 angstroms to a maximum of 87% at 135 angstroms. Using a simple relationship for the charge collection efficiency of the CCD pixels as a function of depth, we present a semi-empirical model with few parameters which reproduces our measurements with a fair degree of accuracy. The advantage of this model is that it can be used to predict CCD QE performance for shallow backside implanted devices without detailed solution of a system of differential equations, as in conventional approaches, and yields a simple analytic form for the charge collection efficiency which is adequate for detector calibration purposes.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert A. Stern, Lawrence Shing, Morley M. Blouke, "X-ray, EUV, UV, and optical quantum efficiency measurements of laser-annealed ion-implanted CCDs", Proc. SPIE 2006, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV, (19 November 1993); doi: 10.1117/12.162842; https://doi.org/10.1117/12.162842
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