Paper
16 December 1993 Applications of CdTe detectors in x-ray imaging and metrology
Marc Cuzin, Francis Glasser, Jean Lajzerowicz, Francoise Mathy, Loick Verger
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Abstract
Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The characteristic of ohmic contact for these compounds is briefly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25 X 15 X 0.9 mm3) where spatial resolution, contrast, and wide dynamic are the main criteria. The excitation is typically microsecond(s) range. X-ray flash radiography with 10 ns burst is in an intermediate time domain where excitation is similar to electron life-time in cadmium telluride. In a laser fusion experiment the excitation is in the range of 50 ps and we develop for such high band devices photoconductive structures able to study very short x-ray emission. Thin polycrystalline MOCVD CdTe films with picosecond response are an alternative material suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (approximately 50 GHz).
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marc Cuzin, Francis Glasser, Jean Lajzerowicz, Francoise Mathy, and Loick Verger "Applications of CdTe detectors in x-ray imaging and metrology", Proc. SPIE 2009, X-Ray Detector Physics and Applications II, (16 December 1993); https://doi.org/10.1117/12.164738
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Cited by 24 scholarly publications.
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KEYWORDS
Crystals

Sensors

X-rays

X-ray detectors

Photoresistors

Physics

Picosecond phenomena

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