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1 November 1993 Development of MBE-grown HgCdTe 64 x 64 FPA for long-wavelength IR detection
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Abstract
The HgCdTe (MCT) 64 X 64 focal plane array (FPA) for long wavelength infrared (LWIR) detection was developed, using MCT epilayers grown by molecular beam epitaxy (MBE). The n-on-p photodiode array has a cutoff wavelength of 10.7 micrometers . The readout circuit, with off focal plane integration capacitance, was designed for 77 K operation. These components were fabricated independently and were hybridized. The 97.8% operability was obtained. Photodiode characteristics for each pixel were measured directly. Mean R$o)A value of 1.9 (Omega) (DOT) cm2 and quantum efficiency of 0.3 were obtained. Using an infrared camera system with nonuniformity correction function, the infrared image was successfully demonstrated. An NETD (noise equivalent temperature difference) value of 0.117 K was attained with an F/2.5 optical lens under the 300 K background condition.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshio Kanno, Minoru Saga, Akihiro Kawahara, Ryuichi Oikawa, Akira Ajisawa, Yoshitada Tomioka, Naoki Oda, Toshio Yamagata, Susumu Murashima, Tsuyosi Shima, and Noboru Yasuda "Development of MBE-grown HgCdTe 64 x 64 FPA for long-wavelength IR detection", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); https://doi.org/10.1117/12.160578
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