1 November 1993 Long-wavelength stacked Si1-x Gex/Si heterojunction-internal-photoemission infrared detectors
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Abstract
Utilizing the low temperature silicon molecular beam epitaxy (MBE) growth of degenerately doped SiGe layers on Si, long wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. The detector structure consists of several periods of degenerately boron doped thin (20 cm-3) has been achieved and high crystalline quality multiple SiGe/Si layers have been obtained. For the experiment several stacked Si0.7Ge0.3/Si HIP detectors with various SiGe layer thickness and doping concentration have been fabricated. The detectors have exhibited strong infrared absorption and near ideal thermionic-emission dark current characteristics. For the stacked Si0.7Ge0.3/Si HIP detectors with [B] equals 4 X 1020 cm-3, strong photoresponse at wavelengths ranging 2 to 20 micrometers has been measured. The effects of doping concentration on the detector optical and electrical characteristics have been studied. Using the measured quantum efficiency and dark current data, detectivity (D(lambda )*) of detectors has been estimated.
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Jin Suk Park, True Lon Lin, Eric W. Jones, Hector M. Del Castillo, Thomas George, Sarath D. Gunapala, "Long-wavelength stacked Si1-x Gex/Si heterojunction-internal-photoemission infrared detectors", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); doi: 10.1117/12.160539; https://doi.org/10.1117/12.160539
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