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1 November 1993 Long-wavelength stacked Si1-x Gex/Si heterojunction-internal-photoemission infrared detectors
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Utilizing the low temperature silicon molecular beam epitaxy (MBE) growth of degenerately doped SiGe layers on Si, long wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. The detector structure consists of several periods of degenerately boron doped thin (20 cm-3) has been achieved and high crystalline quality multiple SiGe/Si layers have been obtained. For the experiment several stacked Si0.7Ge0.3/Si HIP detectors with various SiGe layer thickness and doping concentration have been fabricated. The detectors have exhibited strong infrared absorption and near ideal thermionic-emission dark current characteristics. For the stacked Si0.7Ge0.3/Si HIP detectors with [B] equals 4 X 1020 cm-3, strong photoresponse at wavelengths ranging 2 to 20 micrometers has been measured. The effects of doping concentration on the detector optical and electrical characteristics have been studied. Using the measured quantum efficiency and dark current data, detectivity (D(lambda )*) of detectors has been estimated.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin Suk Park, True Lon Lin, Eric W. Jones, Hector M. Del Castillo, Thomas George, and Sarath D. Gunapala "Long-wavelength stacked Si1-x Gex/Si heterojunction-internal-photoemission infrared detectors", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993);


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