1 November 1993 Silicon-microstructure superconducting microbolometer infrared arrays
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Abstract
High-temperature superconducting microbolometer silicon microstructure infrared arrays offer the potential of lowest possible production cost combined with high performance for use in infrared imaging systems. Linear arrays employing thin films of yttrium barium copper oxide have been prepared. Small two-dimensional arrays are under development. A 240 X 336 array of 50 micrometers X 50 micrometers pixels operating at 85 K at 30 frames per second with f/1 optics has a theoretical noise equivalent temperature difference of 2.0 X 10-3 deg K.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Burgess R. Johnson, Burgess R. Johnson, Paul W. Kruse, Paul W. Kruse, } "Silicon-microstructure superconducting microbolometer infrared arrays", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); doi: 10.1117/12.160529; https://doi.org/10.1117/12.160529
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