PROCEEDINGS VOLUME 2021
SPIE'S 1993 INTERNATIONAL SYMPOSIUM ON OPTICS, IMAGING, AND INSTRUMENTATION | 11-16 JULY 1993
Growth and Characterization of Materials for Infrared Detectors
SPIE'S 1993 INTERNATIONAL SYMPOSIUM ON OPTICS, IMAGING, AND INSTRUMENTATION
11-16 July 1993
San Diego, CA, United States
Growth of Detector Materials I
Proc. SPIE 2021, Review of key trends in HgCdTe materials for IR focal plane arrays, 0000 (7 December 1993); https://doi.org/10.1117/12.164932
Proc. SPIE 2021, Bulk growth of II-VI crystals in the microgravity environment of USML-1, 0000 (7 December 1993); https://doi.org/10.1117/12.164940
Proc. SPIE 2021, Advanced infrared photonic devices based on HgMnTe, 0000 (7 December 1993); https://doi.org/10.1117/12.164946
Proc. SPIE 2021, Application of pyroelectric P(VDF/TrFE) thin films in integrated sensors and arrays, 0000 (7 December 1993); https://doi.org/10.1117/12.164948
Growth of Detector Materials II
Proc. SPIE 2021, Uniform deposition of CdTe, HgTe, and HgCdTe by ALE and MOCVD, 0000 (7 December 1993); https://doi.org/10.1117/12.164949
Proc. SPIE 2021, Recent advances in the metalorganic molecular beam epitaxy of HgCdTe, 0000 (7 December 1993); https://doi.org/10.1117/12.164950
Proc. SPIE 2021, MBE-codeposited iridium silicide films on Si(100) and Si(111), 0000 (7 December 1993); https://doi.org/10.1117/12.164951
Proc. SPIE 2021, Status of HgCdTe MBE technology for IRFPA, 0000 (7 December 1993); https://doi.org/10.1117/12.164952
Proc. SPIE 2021, 1024-element linear InxGa1-xAs/InAsyP1-y detector arrays for environmental sensing from 1 um to 2.6 um, 0000 (7 December 1993); https://doi.org/10.1117/12.164953
Proc. SPIE 2021, Lead sulfide infrared detectors, 0000 (7 December 1993); https://doi.org/10.1117/12.164933
Material Growth on Silicon Substrates for IR Focal Plane Arrays
Proc. SPIE 2021, Vapor phase epitaxy of ZnTe on silicon substrates, 0000 (7 December 1993); https://doi.org/10.1117/12.164934
Proc. SPIE 2021, Direct MBE growth of CdZnTe on Si(100) and Si(112) substrates for large-area HgCdTe IRFPAs, 0000 (7 December 1993); https://doi.org/10.1117/12.164935
Proc. SPIE 2021, Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications, 0000 (7 December 1993); https://doi.org/10.1117/12.164936
Quantum Wells and Superlattices
Proc. SPIE 2021, Molecular beam epitaxial growth and characterization of (001) Hg1-xCdxTe-HgTe superlattices, 0000 (7 December 1993); https://doi.org/10.1117/12.164937
Proc. SPIE 2021, Normal-incidence quantum-well infrared photodetectors utilizing ellipsoidal valley intersubband transitions in n-type GaSb-AlSb multiquantum wells, 0000 (7 December 1993); https://doi.org/10.1117/12.164938
Proc. SPIE 2021, Thickness uniformity requirements for GaAs/AlGaAs miniband transport quantum-well infrared detector wafers, 0000 (7 December 1993); https://doi.org/10.1117/12.164939
Proc. SPIE 2021, Quantum-well infrared detectors: photocurrent spectroscopy and volt-ampere characteristics, 0000 (7 December 1993); https://doi.org/10.1117/12.164941
Proc. SPIE 2021, Electronic state of three-dimensional quantum wells, 0000 (7 December 1993); https://doi.org/10.1117/12.164942
Characterization of IR Materials
Proc. SPIE 2021, Characterization of impurities and defects in InSb and HgCdTe using novel magneto-optical techniques, 0000 (7 December 1993); https://doi.org/10.1117/12.164943
Proc. SPIE 2021, Hg1-xCdxTe electrical property changes induced by rapid thermal annealing, 0000 (7 December 1993); https://doi.org/10.1117/12.164944
Proc. SPIE 2021, Transient laser-induced surface deformation of Si-based multilayer structures, 0000 (7 December 1993); https://doi.org/10.1117/12.164945
Proc. SPIE 2021, Nondestructive characterization of Hg1-xCdxTe layer structures by magneto-thermoelectric measurements, 0000 (7 December 1993); https://doi.org/10.1117/12.164947
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