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7 December 1993 1024-element linear InxGa1-xAs/InAsyP1-y detector arrays for environmental sensing from 1 um to 2.6 um
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Abstract
This paper describes a unique and high-performance 1024-element linear InxGa1-xAs/InAsyP1-y detector array for environmental sensing applications in the 1 micrometers to 2.6 micrometers spectral range. The detector array was fabricated using hydride vapor phase epitaxy grown material. The size of each pixel of the detector array is 13 X 500 micrometers 2 with 25 micrometers pitch. Improvements in dark current and quantum efficiency were realized by optimization of crystal growth, thermal annealing, and diffusion techniques. Transmission electron microscopy analysis of the fabricated structure was used to find the effect of thermal annealing on the dislocation density and the leakage current. The measured results of the 1024-element detector array sliver is presented.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Krishna Rao Linga, Abhay M. Joshi, Vladimir S. Ban, and S. M. Mason "1024-element linear InxGa1-xAs/InAsyP1-y detector arrays for environmental sensing from 1 um to 2.6 um", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164953
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