7 December 1993 Advanced infrared photonic devices based on HgMnTe
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Abstract
This review is oriented toward practical technological aspects of growth and applications of narrow bandgap semimagnetic semiconducting HgMnTe alloys. It summarizes recent achievements in crystal growth, device fabrication, and device characterization. Current work is focused on analyses of the growth process, approaches for the achievement of improved composition uniformity, the relationship between material properties and device performance, a comparison of performance of HgMnTe and HgCdTe devices, and new magnetic exchanged- based IR devices.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piotr Becla, Piotr Becla, } "Advanced infrared photonic devices based on HgMnTe", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); doi: 10.1117/12.164946; https://doi.org/10.1117/12.164946
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