Paper
7 December 1993 Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications
Hans Zogg, Alexander Fach, Clau Maissen, Jiri Masek, Stefan Blunier, K. Kessler, Peter Mueller, Carmine Paglino, Stefan I. Teodoropol, A. N. Tiwari
Author Affiliations +
Abstract
MBE growth and IR device fabrication with epitaxial IV-VI layers on Si-substrates is reviewed and some new results are included. Epitaxy is achieved using a stacked BaF2/CaF2 or CaF2 buffer layer. While photolithographic delineation techniques are somewhat difficult with BaF2 (which is soluble in water), reliable wet-etching techniques are easy with the CaF2 buffer. Photovoltaic IV-VI sensors on Si(111) substrates are fabricated with cut-off wavelengths covering the whole atmospheric 3 - 5 and 8 - 14 micrometers window. They offer the possibility for low cost IR focal plane arrays with sensitivities similar to MCT, but with much less demanding material processing steps.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Zogg, Alexander Fach, Clau Maissen, Jiri Masek, Stefan Blunier, K. Kessler, Peter Mueller, Carmine Paglino, Stefan I. Teodoropol, and A. N. Tiwari "Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164936
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Photovoltaics

Silicon

Epitaxy

Thermography

X-rays

Electronics

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