Review of key trends in HgCdTe materials for IR focal plane arrays

Carlos A. Castro

doi:10.1117/12.164932

7 December 1993 Review of key trends in HgCdTe materials for IR focal plane arrays

Carlos A. Castro

Proceedings Volume 2021, Growth and Characterization of Materials for Infrared Detectors; (1993) https://doi.org/10.1117/12.164932
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

The need for high-performance, low-cost IR focal plane arrays is a constant driver for materials technology improvement. Due to its high quantum efficiency and variable bandgap capability, HgCdTe is the preferred materials systems for a wide range of applications. HgCdTe crystal growth has evolved over the past fifteen years from relatively small (< 10 mm diameter) bulk multigrained ingots to large (approximately 75 mm diameter) epitaxial layers on composite substrates, but issues regarding material quality and producibility remain. Epitaxial techniques are now firmly established as the superior approaches for the growth of large-area, compositionally uniform material. Enabling this trend is the extensive progress in the size and crystalline quality of bulk lattice-matched CdZnTe substrates and the emergence of large-area heteroepitaxial substrates with CdTe and CdZnTe buffer layers on GaAs and Si. Because of the multiple interfaces, defect levels in the latter tend to be about 100 X larger than in bulk substrates; reducing these levels will be a challenge for the near future. In the meantime, bulk substrates will remain in demand for their lower dislocation densities.

Citation Download Citation

Carlos A. Castro "Review of key trends in HgCdTe materials for IR focal plane arrays", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164932

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