7 December 1993 Status of HgCdTe MBE technology for IRFPA
Author Affiliations +
Abstract
HgCdTe MBE technology is becoming a mature growth technology for focal plane array applications. Device quality materials have been growth with alloy compositions required for SWIR to VLWIR applications. X-ray characterization results indicate that the epilayers exhibit FWHM of about 25 arc-sec, which is indicative of high quality materials. In addition to x-ray data, the observation of low defect density (EPD < 2 X 105/cm2), long minority carrier lifetime (t equals 1 micro-second for x equals 0.23, n equals 2 X 1015/cm3), and efficient IR photoluminescence, all attest to the device quality of HgCdTe epilayers grown by MBE. The breakthroughs to achieve In(n-type) and As(p-type) doping in-situ provide greater flexibility for fabricating advanced heterojunction devices. High-performance IR devices that use HgCdTe MBE materials are demonstrated. The additional development of drying etching and passivation in an ultrahigh vacuum environment coupled with an MBE growth system should lead to cost-effective and flexible manufacturing of devices for military and commercial applications.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Owen K. Wu, "Status of HgCdTe MBE technology for IRFPA", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); doi: 10.1117/12.164952; https://doi.org/10.1117/12.164952
PROCEEDINGS
11 PAGES


SHARE
KEYWORDS
Mercury cadmium telluride

Doping

Sensors

Heterojunctions

Indium

Liquid phase epitaxy

Mercury

RELATED CONTENT

State of the art of Hg melt LPE HgCdTe at...
Proceedings of SPIE (December 10 1992)
Doping control in HgCdTe epitaxial layers
Proceedings of SPIE (October 22 2003)
Dual-band infrared HgCdTe focal plane array
Proceedings of SPIE (January 23 2003)
Recent progress in the doping of MBE HgCdTe
Proceedings of SPIE (September 01 1995)
A preliminary study on MBE-grown HgCdTe two-color FPAs
Proceedings of SPIE (January 10 2005)
VLIWR HgCdTe staring focal plane array development
Proceedings of SPIE (September 12 2007)

Back to Top