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7 December 1993 Uniform deposition of CdTe, HgTe, and HgCdTe by ALE and MOCVD
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Results are presented on uniform deposition of CdTe, HgTe, and HgCdTe thin films by atomic layer epitaxy (ALE) using Hg-, Cd-, and Te-alkyl chemistry at deposition rates of a few monolayers/min. In contrast, we also discuss the deposition of uniform CdTe(Zn) films on large-area alternative substrates by conventional metalorganic chemical vapor deposition (MOCVD) at growth rates of a few monolayers/sec. Excellent thickness and compositional uniformity (1% standard deviation) have been achieved for MOCVD CdTe(Zn) films on 75 mm GaAs and Si substrates. ALE growth of CdTe was carried out over a wide range of temperatures (250 to 320 degree(s)C) and reactant partial pressures. ALE of HgTe with excellent uniformity and surface morphology has been achieved over the temperature range of 120 to 160 degree(s)C. HgCdTe layers were also grown by alternately depositing HgTe and CdTe on CdTe substrates and then interdiffusing them at higher temperatures. FTIR measurements of a 0.43 micron thick HgCdTe film deposited by this technique showed excellent characteristics.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nasser H. Karam, Kurt J. Linden, Hassan Ehsani, and Ishwara B. Bhat "Uniform deposition of CdTe, HgTe, and HgCdTe by ALE and MOCVD", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993);


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