15 October 1993 Picosecond silicon metal-semiconductor-metal photodiode
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Abstract
The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with finger widths and spacings down to 200 nm, subjected to femtosecond optical pulse excitations, was measured with a subpicosecond electro-optic sampling system. Electrical responses with fullwidth at half-maximum (FWHM) as short as 3.7 ps, at a corresponding 3 dB bandwidth of 110 GHz, were generated by violet-light excitation. These diodes are the fastest silicon photodetectors reported to date. Detailed bias and light-intensity dependence of the diode response has been measured. These results are used to obtain the velocity-field relation of electrons in silicon and to demonstrate the ideal transit-time-limited response of the diodes.
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Thomas Y. Hsiang, Thomas Y. Hsiang, Sotiris Alexandrou, Sotiris Alexandrou, Chia-Chi Wang, Chia-Chi Wang, Mark Y. Liu, Mark Y. Liu, Stephen Y. Chou, Stephen Y. Chou, } "Picosecond silicon metal-semiconductor-metal photodiode", Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); doi: 10.1117/12.158589; https://doi.org/10.1117/12.158589
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