15 October 1993 Using computer simulation to understand detection enhancement in amorphous silicon structures
Author Affiliations +
Abstract
Photodetection mechanisms can be quite complex in amorphous semiconductors due to the extensive trapping and electric field redistribution. When properly understood and exploited, this rich complexity can lead to enhanced photodetection. Using the AMPS computer model, we explore two such experimentally verified situations: one is an example of a primary photoconductivity type of effect which can yield quantum efficiencies greater than unity and the other is an example of a secondary photoconductivity type of effect which can yield gains of 103.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingya Hou, Jingya Hou, Francisco A. Rubinelli, Francisco A. Rubinelli, Stephen J. Fonash, Stephen J. Fonash, Murray Bennett, Murray Bennett, Scott Wiedeman, Scott Wiedeman, Liyou Yang, Liyou Yang, James Newton, James Newton, } "Using computer simulation to understand detection enhancement in amorphous silicon structures", Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); doi: 10.1117/12.158591; https://doi.org/10.1117/12.158591
PROCEEDINGS
5 PAGES


SHARE
Back to Top