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9 November 1993 Monolithic optoelectronic transistor: a new optical neuron device
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Abstract
An integrated optoelectronic device, the monolithic optoelectronic transistor (MOET), has been demonstrated. The MOET functions as an optical sum-and-threshold device with large- signal optical gain. It can be electrically biased to achieve either abrupt switching thresholds or quasi-sigmoidal optical transfer characteristics, and excitatory and inhibitory inputs can be incorporated through a simple modification of the single-input device. Initial MOET devices displayed an optical gain greater than 10 and an output contrast ratio exceeding 50. The MOET has promising characteristics as a building block of optoelectronically implemented neural networks and image preprocessing systems.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian F. Aull, Elliott R. Brown, Paul A. Maki, Kirby B. Nichols, Susan C. Palmateer, and Thomas A. Lind "Monolithic optoelectronic transistor: a new optical neuron device", Proc. SPIE 2026, Photonics for Processors, Neural Networks, and Memories, (9 November 1993); https://doi.org/10.1117/12.163588
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