9 November 1993 Three-dimensional optical storage system based on electron-trapping thin films
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Abstract
A 3D optical memory based on stacked-layer transparent electron trapping (ET) thin films is under development at Quantex Corporation. As a bit-plane oriented 3D optical storage system, 2D data pages can be accessed fully in parallel. A page of data are written into the memory by properly imaging the page composer onto the addressed ET layer with a dynamic focusing lens By suitably controlling the voltage applied to each of the ET film layers, only an addressed layer is accessible, while all the other layers are turned off. To read out a data page, a slice of infrared (IR) light is guided into the ET film from the edge. Due to the high refractive index of ET materials, the IR light is restricted within the addressed ET film and can not leak to the other layers. The emission corresponding to the written data is stimulated by the IR reading light and is detected by an array detector. The feasibility of this 3D storage system has been demonstrated by preliminary experiments.
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Xiangyang Yang, Xiangyang Yang, Charles Y. Wrigley, Charles Y. Wrigley, Joseph Lindmayer, Joseph Lindmayer, } "Three-dimensional optical storage system based on electron-trapping thin films", Proc. SPIE 2026, Photonics for Processors, Neural Networks, and Memories, (9 November 1993); doi: 10.1117/12.163606; https://doi.org/10.1117/12.163606
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