1 December 1993 Laser instabilities and the influence of the nonlinear semiconductor gain medium
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Abstract
A comprehensive microscopic theory is reviewed which allows us to compute gain and refractive index properties of semiconductor heterostructures with varying degrees of strain and quantum confinement. The theory is applied to a model unstable resonator semiconductor laser. It is shown that the specific properties of the gain medium strongly influence the lateral mode stability.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weng W. Chow and Stephan W. Koch "Laser instabilities and the influence of the nonlinear semiconductor gain medium", Proc. SPIE 2039, Chaos in Optics, (1 December 1993); doi: 10.1117/12.164754; https://doi.org/10.1117/12.164754
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