22 December 1993 Thermal stability of self-organized gratings and defects in Ge- and Ge-P-doped silica core fibers
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Abstract
Thermal stabilities of photoinduced paramagnetic defects in second-harmonic (SHG) generation Ge-P-doped silica fibers and in Ge- and Ge-P-doped silica preforms are studied by electron-spin-resonance and compared with that of the reported self-organized gratings. Our data suggests that the charge trapping sites for the electric-field-induced SHG are Ge(1), Ge(2) and Ge E'd1 centers. The defects responsible for the Bragg gratings are Ge E'-type centers. Thermal darkening in Ge-doped silica core fibers reported is likely due to the thermal induced Ge E'd1 center.
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Tsung-Ein Tsai, Tsung-Ein Tsai, E. Joseph Friebele, E. Joseph Friebele, David L. Griscom, David L. Griscom, } "Thermal stability of self-organized gratings and defects in Ge- and Ge-P-doped silica core fibers", Proc. SPIE 2044, Photosensitivity and Self-Organization in Optical Fibers and Waveguides, (22 December 1993); doi: 10.1117/12.165649; https://doi.org/10.1117/12.165649
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