1 February 1994 Direct laser write-on exposure of thick film screens
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The aim of this work was to study the pros and cons of using the laser exposure of thick film screen emulsions (thicknesses 5 - 30 micrometers ) with a mesh count of 200 - 400. A focused Ar+ laser, emitting wavelengths in the UV (351 and 365 nm), was utilized in the exposure of commercial negative diazotype emulsions. A special visible sensitized orthochromatic thick film emulsion was used at a wavelength of 488 nm. The Ar+ laser beam was focused using an objective with a focal length of 28 mm (UV, apochromatic, NA equals 0.32, spot size 1 micrometers ) and 20 mm (visible, NA equals 0.42, spot size 6 micrometers ). The laser beam was raster scanned with an alignment accuracy of 1 micrometers and unit step of 80 nm and was modulated above the thick film screen.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Janne Remes, Hannu Moilanen, Seppo Leppaevuori, Juha Vaananen, Antti Uusimaki, "Direct laser write-on exposure of thick film screens", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167541; https://doi.org/10.1117/12.167541

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