1 February 1994 Epitaxial growth of LiNbO3 optical-waveguide films by excimer laser ablation
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Abstract
The epitaxial growth of LiNbO3 films by the ArF excimer laser ablation is demonstrated to form electro-optic (EO) thin-film waveguides on sapphire and LiTaO3 c-plates. The x- ray diffraction spectra indicate that the resulting films are well oriented along the c axis when a Li-rich LiNbO3 ceramics is used as the target. The chemical composition of the film was successfully evaluated by measurement of the extraordinary index ne on the basis of the guided-wave excitation with prism couplers. Stoichiometric films are grown on both sapphire and LiTaO3 c-plates by changing the content of excess Li2O in the target. The propagation loss of 6 dB/cm was attained in the thin-film waveguide on LiTaO3 c- plate. In addition, the EO effect of the film was roughly estimated by fabrication and characterization of a light deflector with an EO grating.
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Masamitsu Haruna, Masamitsu Haruna, Jun Tsutsumi, Jun Tsutsumi, Yasuo Segawa, Yasuo Segawa, Hiroshi Nishihara, Hiroshi Nishihara, } "Epitaxial growth of LiNbO3 optical-waveguide films by excimer laser ablation", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167551; https://doi.org/10.1117/12.167551
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