1 February 1994 Excimer laser-induced metallization for Si and GaAs microelectronics
Author Affiliations +
We have investigated both the large area excimer laser-induced deposition of W and it silicides on GaAs to form thermally stable Schottky contacts, and the reduction of Cu(I) and Cu(II) compounds for the deposition of Cu interconnects for Si microelectronics. Using a KrF excimer laser at 25 mJ/cm2 and a mixture of WF6, SiH4 and Ar, metallic W is deposited with an average growth rate of 1 angstrom/pulse. For Cu deposition, the precursor Cu(hfac)(TMVS) gives much purer deposits than the Cu(II) compounds which have been studied. For both processes, possible deposition mechanisms are discussed in terms of gas phase and surface reactions.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michel Meunier, Michel Meunier, Maleck Tabbal, Maleck Tabbal, Marc Suys, Marc Suys, Ricardo Izquierdo, Ricardo Izquierdo, Arthur Yelon, Arthur Yelon, Edward Sacher, Edward Sacher, Suzie Poulin, Suzie Poulin, } "Excimer laser-induced metallization for Si and GaAs microelectronics", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167545; https://doi.org/10.1117/12.167545


Laser-LIGA for Serpentine Ni Microstructure
Proceedings of SPIE (November 21 2001)
Assessment of a discharge excited supersonic free jet as a...
Proceedings of SPIE (February 01 1991)
Chemical-free cleaning using excimer lasers
Proceedings of SPIE (April 08 1996)
Narrow Band KrF Excimer Laser Tunable And...
Proceedings of SPIE (December 16 1988)

Back to Top