1 February 1994 Excimer laser-induced metallization for Si and GaAs microelectronics
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We have investigated both the large area excimer laser-induced deposition of W and it silicides on GaAs to form thermally stable Schottky contacts, and the reduction of Cu(I) and Cu(II) compounds for the deposition of Cu interconnects for Si microelectronics. Using a KrF excimer laser at 25 mJ/cm2 and a mixture of WF6, SiH4 and Ar, metallic W is deposited with an average growth rate of 1 angstrom/pulse. For Cu deposition, the precursor Cu(hfac)(TMVS) gives much purer deposits than the Cu(II) compounds which have been studied. For both processes, possible deposition mechanisms are discussed in terms of gas phase and surface reactions.
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Michel Meunier, Maleck Tabbal, Marc Suys, Ricardo Izquierdo, Arthur Yelon, Edward Sacher, Suzie Poulin, "Excimer laser-induced metallization for Si and GaAs microelectronics", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167545; https://doi.org/10.1117/12.167545

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