1 February 1994 Growth of 105k(BiPb)2Sr2Ca2Cu3O10 films on MgO by the pulsed laser deposition technique
Author Affiliations +
Abstract
To compensate for the loss of Pb during the preparation of BiSrCaCuO films we have deposited layers of PbO as part of a multilayer sandwich structure with BiPbSrCaCuO using the pulsed laser deposition technique. We have carefully optimized three parameters, namely the substrate temperature, post annealing temperature, and post annealing duration in order to produce the highest content of the 2223 phase in the films. By using a substrate temperature of 250 degree(s)C and ex-situ annealing at 854 degree(s)C for 15 hours in air we have produced highly c-axis oriented films which comprises some 95% 2223. These films typically exhibit Tc values of 105.5 K with associated critical current density of 2.5 X 104 A/Cm2 at 70 K.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amin Sajjadi, Ian W. Boyd, "Growth of 105k(BiPb)2Sr2Ca2Cu3O10 films on MgO by the pulsed laser deposition technique", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167573; https://doi.org/10.1117/12.167573
PROCEEDINGS
8 PAGES


SHARE
Back to Top