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1 February 1994 Manufacture of diffractive structures in metal and semiconductor thin films by pulse laser irradiation
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Abstract
The metal and semiconductor films (MSF), deposited on the glass and metal substrates, have been used as recording materials when fabricating diffraction gratings by pulse laser irradiation of 1.06 micrometers . The processes of photothermal ablation are the basis for mechanism of diffraction structure formation. The gratings at spatial frequencies of 100 and 500 mm-1 have been fabricated without postexposure treatment by pulse laser irradiation of 20, 100 and 1000 ns in duration. It has been shown that dependence of threshold energy density Ethr from pulse duration (tau) is well approximated by function Ethrvaries direct as(root)(tau) . The relief-phase component of the grating's diffraction efficiency (DE) has been measured.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zoya N. Kalyashova, Vladimir E. Sabinin, V. I. Korolev, and E. P. Mesnyankin "Manufacture of diffractive structures in metal and semiconductor thin films by pulse laser irradiation", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); https://doi.org/10.1117/12.167553
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