1 February 1994 Photo-CVD of dielectric materials by pseudo-continuous excimer sources
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We report the use of vacuum ultraviolet (VUV) light generated from a new type of excimer lamp to initiate the deposition of dielectric thin films in a photo-chemical vapor deposition process. Compared with other lamps, these pseudo-continuous light sources can provide high photon fluxes (more than a few watts) over large areas. The photo-deposited film properties were determined using the usual techniques of ellipsometry, FTIR spectroscopy, and electrical measurements. Good film quality was obtained making this technique highly attractive. A layered combination of silicon oxide, silicon nitride, and silicon oxynitride can be produced in the same reactor at temperatures below 300 degree(s)C. The technique also offers very good control of the stoichiometry in the case of Silicon oxynitride film deposition, and therefore provides interesting perspectives for optical applications.
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Philippe Bergonzo, Philippe Bergonzo, U. Kogelschatz, U. Kogelschatz, Ian W. Boyd, Ian W. Boyd, "Photo-CVD of dielectric materials by pseudo-continuous excimer sources", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167556; https://doi.org/10.1117/12.167556

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