Investigation of charge photoinjection and transport processes in photoelectric structures with memory

Sergey L. Vinogradov; Vitaly E. Shubin

doi:10.1117/12.165998

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21 January 1994 Investigation of charge photoinjection and transport processes in photoelectric structures with memory

Sergey L. Vinogradov, Vitaly E. Shubin

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Proceedings Volume 2051, International Conference on Optical Information Processing; (1994) https://doi.org/10.1117/12.165998
Event: Optical Information Processing: International Conference, 1993, St. Petersburg, Russian Federation

Abstract

Photoelectric structures with memory (PESM) of the type Au-ZnSe-SiO₂-Si provide conversion of an optical image to a charge pattern in a high-resistance wide band-gap semiconductor ZnSe having a high concentration of trapping sites (TS). The recorded light gives rise to a photoinjection of charge carriers from semitransparent Au electrode to ZnSe. Then electrons or holes drift through the ZnSe layer to the SiO₂ boundary and are localized on TS. So, built-in charge spatial distribution of filled TS is in accordance with an input optical image. The image may be read by a local photosignal produced in the Si surface charge region by optical raster scanning.

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Sergey L. Vinogradov and Vitaly E. Shubin "Investigation of charge photoinjection and transport processes in photoelectric structures with memory", Proc. SPIE 2051, International Conference on Optical Information Processing, (21 January 1994); https://doi.org/10.1117/12.165998

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