21 January 1994 Minimal voltage-length product accessible in channel-diffused waveguide electro-optic modulators in doped ferroelectrics
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Proceedings Volume 2051, International Conference on Optical Information Processing; (1994) https://doi.org/10.1117/12.165985
Event: Optical Information Processing: International Conference, 1993, St. Petersburg, Russian Federation
Abstract
The problem of electro-optic interaction between a fundamental mode of channel diffused waveguide fabricated in doped LiNbO3 type ferroelectrics and an electrostatic field of semi-infinite electrodes was investigated. As a result, the optimum relations between the geometric parameters of the waveguide-electrodes system to attain the minimal halfwave voltage-length product (U(pi )l) were obtained. Since the surface index increase (Delta) ns is the main factor setting the limit on the value of U(pi )l in the red and infrared spectrum area, the maximal possible values of (Delta) ns were estimated on the basis of the existing notions about the physical mechanisms controlling the refractive indices in ferroelectrics. It has been found that the most optimistic estimations give the decrease of U(pi )l by 40% in comparison with the best currently achieved level.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aleksandra E. Kolosovskaya, C. C. Ziling, "Minimal voltage-length product accessible in channel-diffused waveguide electro-optic modulators in doped ferroelectrics", Proc. SPIE 2051, International Conference on Optical Information Processing, (21 January 1994); doi: 10.1117/12.165985; https://doi.org/10.1117/12.165985
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