21 January 1994 New features of the reflection of far-infrared radiation from a structure with high-doped GaAs layer
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Proceedings Volume 2051, International Conference on Optical Information Processing; (1994) https://doi.org/10.1117/12.165978
Event: Optical Information Processing: International Conference, 1993, St. Petersburg, Russian Federation
Abstract
The mechanism of strong optical nonlinearity connected with the heating of conduction electrons by far infrared electromagnetic radiation in GaAs is theoretically investigated. It is shown that transitions of electrons from (Gamma) (sigma ) minimum to L(sigma ) minima of energy in conduction band give the main contribution into the effect. It is found that the intensity of electromagnetic wave necessary for effective modulation of reflection coefficient from many layered structure can be strongly reduced in the condition of leaky TM-polarized wave-guide mode excitation in the structure.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gennady N. Shkerdin, Alexander I. Voronko, "New features of the reflection of far-infrared radiation from a structure with high-doped GaAs layer", Proc. SPIE 2051, International Conference on Optical Information Processing, (21 January 1994); doi: 10.1117/12.165978; https://doi.org/10.1117/12.165978
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